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Número de pieza | SSM6K406TU | |
Descripción | Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSM6K406TU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K406TU
○ High-Speed Switching Applications
• 4.5-V drive
• Low ON-resistance: Ron = 38.5 mΩ (max) (@VGS = 4.5 V)
Ron = 25.0 mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS 30 V
Gate–source voltage
VGSS ±20 V
Drain current
DC
Pulse
ID
IDP
4.4
A
8.8
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Tch 150 °C
Storage temperature
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
2.1±0.1
1.7±0.1
Unit: mm
16
25
34
UF6
JEDEC
―
JEITA
―
TOSHIBA
2-2T1D
Weight: 7.0 mg (typ.)
Marking
65
4
KNE
12
3
Equivalent Circuit (top view)
6 54
123
1 2008-07-03
1 page rth – tw
1000 Single Pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
100
10
1
0.001
0.01
0.1
1 10 100
Pulse width tw (s)
1000
SSM6K406TU
1000
t = 10 s
800
PD – Ta
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm ,
Cu Pad: 645 mm2)
600
DC
400
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2008-07-03
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSM6K406TU.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM6K406TU | Field Effect Transistor | Toshiba Semiconductor |
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