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PDF SSM6K504NU Data sheet ( Hoja de datos )
| Número de pieza | SSM6K504NU | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
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MOSFETs Silicon N-Channel MOS (U-MOS-H)
SSM6K504NU
1. Applications
• High-Speed Switching
2. Features
(1) 4.5 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 26 mΩ (max) (@VGS = 4.5 V)
RDS(ON) = 19.5 mΩ (max) (@VGS = 10 V)
3. Packaging and Pin Assignment
SSM6K504NU
1.2.5.6 Drain
3. Gate
4. Source
UDFN6B
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
9A
Drain current (pulsed)
(Note 1,2)
IDP
18
Power dissipation
(Note 3)
PD
1.25 W
Power dissipation
t ≤ 10 s
(Note 3)
PD
2.5 W
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%
Note 3: Device mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 645 mm2)
Start of commercial production
2012-07
1 2014-04-04
Rev.2.0
1 page  
7. Characteristics Curves (Note)
SSM6K504NU
Fig. 7.1 ID - VDS
Fig. 7.2 ID - VGS
Fig. 7.3 RDS(ON) - VGS
Fig. 7.4 RDS(ON) - VGS
Fig. 7.5 RDS(ON) - ID
Fig. 7.6 RDS(ON) - Ta
5 2014-04-04
Rev.2.0
5 Page | ||
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| PDF Descargar | [ Datasheet SSM6K504NU.PDF ] | |
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