|
|
PDF SSM6K411TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6K411TU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SSM6K411TU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
SSM6K411TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K411TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 2.5-V drive
• Low ON-resistance：RDS(ON) = 23.8 mΩ (max) (@VGS = 2.5 V)
RDS(ON) = 14.3 mΩ (max) (@VGS = 3.5 V)
RDS(ON) = 12 mΩ (max) (@VGS = 4.5 V)
2.1±0.1
1.7±0.1
Unit: mm
16
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
25
34
Drain-Source voltage
VDSS 20 V
Gate-Source voltage
VGSS ±12 V
Drain current
DC
Pulse
ID (Note1)
IDP(Note1)
10
20
A
Power dissipation
Channel temperature
PD (Note2)
t<10s
Tch
1
2
150
W
°C
UF6
1,2,5,6 ： Drain
3 ： Gate
4 ： Source
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2T1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
Weight: 7.0 mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
654
KNI
123
Equivalent Circuit (top view)
654
123
1 2010-06-09
1 page  
rth – tw
600
100
10
1
0.001
0.01
Single pulse
Mounted on FR 4 board
(25.4mm × 25.4mm × 1.6mm,
Cu Pad : 645 mm2)
0.1 1 10 100 1000
Pulse width tw (s)
SSM6K411TU
2.5
10 s
2
1.5
DC
1
0.5
PD – Ta
Mounted on FR4 board
(25.4mm×25.4mm×1.6mm ,
Cu Pad : 645 mm2)
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2010-06-09
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM6K411TU.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SSM6K411TU | Field Effect Transistor | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |