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PDF SSM6K405TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6K405TU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM6K405TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K405TU
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: Ron = 307 mΩ (max) (@VGS = 1.5V)
Ron = 214 mΩ (max) (@VGS = 1.8V)
Ron = 164 mΩ (max) (@VGS = 2.5V)
Ron = 126 mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
Drain current
Drain power dissipation
DC
Pulse
VDSS
VGSS
ID
IDP
PD (Note 1)
20
± 10
2.0
4.0
500
V
V
A
mW
Channel temperature
Storage temperature
Tch 150 °C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Unit: mm
2.1±0.1
1.7±0.1
16
25
34
1, 2, 5, 6 : Drain
3 : Gate
UF6 4
: Source
JEDEC
―
JEITA
TOSHIBA
―
2-2T1D
Weight: 7.0 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note 2: Pulse test
Symbol
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
⏐Yfs⏐
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
toff
VDSF
Test Condition
ID = 1 mA, VGS = 0 V
ID = 1 mA, VGS = – 10 V
VDS = 20 V, VGS = 0 V
VGS = ± 10 V, VDS = 0 V
VDS = 3 V, ID = 1 mA
VDS = 3 V, ID = 1.0 A
ID = 1.0 A, VGS = 4.0 V
ID = 1.0 A, VGS = 2.5 V
ID = 0.5 A, VGS = 1.8 V
ID = 0.3 A, VGS = 1.5 V
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, ID= 2.0 A
VGS = 4 V
VDD = 10 V, ID = 0.5 A,
VGS = 0 to 2.5 V, RG = 4.7 Ω
ID = − 2.0 A, VGS = 0 V
(Note2)
Min Typ. Max
20 ⎯ ⎯
12 ⎯ ⎯
⎯⎯
1
⎯ ⎯ ±1
0.35 ⎯
1.0
2.6 5.2
⎯
⎯ 90 126
⎯ 115 164
⎯ 150 214
⎯ 185 307
⎯ 195 ⎯
⎯ 35 ⎯
⎯ 29 ⎯
⎯ 3.4 ⎯
⎯ 2.3 ⎯
⎯ 1.1 ⎯
⎯ 8.0 ⎯
⎯ 9.0 ⎯
⎯ – 0.85 – 1.2
Unit
V
V
μA
μA
V
S
mΩ
pF
nC
ns
V
1 2007-11-01
1 page  
rth – tw
100 Single Pulse
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t , Cu Pad : 645 mm2)
100
10
1
0.001
0.01
0.1
1 10 100
Pulse width tw (s)
1000
SSM6K405TU
1000
t = 10 s
800
600
DC
400
PD – Ta
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6t ,
Cu Pad : 645 mm2)
200
0-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2007-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM6K405TU.PDF ] | |
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