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PDF SSM6K403TU Data sheet ( Hoja de datos )
| Número de pieza | SSM6K403TU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM6K403TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS
SSM6K403TU
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.5V drive
• Low ON-resistance:Ron = 66mΩ (max) (@VGS = 1.5V)
Ron = 43mΩ (max) (@VGS = 1.8V)
Ron = 32mΩ (max) (@VGS = 2.5V)
Ron = 28mΩ (max) (@VGS = 4.0V)
2.1±0.1
1.7±0.1
UNIT: mm
16
25
34
Absolute Maximum Ratings (Ta = 25˚C) (Note)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
Symbol
VDSS
VGSS
ID
IDP
PD (Note1)
Tch
Tstg
Rating
20
±10
4.2
8.4
500
150
−55~150
Unit
V
V
A
mW
°C
°C
UF6
1,2,5,6 : Drain
3 : Gate
4 : source
JEDEC
―
JEITA
―
TOSHIBA
2-2T1D
weight: 7.0mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2)
1 2007-11-01
1 page  
100
Common Source
VDS = 3 V
30 Ta = 25°C
|Yfs| – ID
10
3
1
0.3
0.1
0.01
0.1 1
Drain current ID (A)
10
10000
5000
3000
C – VDS
1000
Ciss
500
300
100
50 Common Source
30 Ta = 25°C
f = 1 MHz
VGS = 0 V
10
0.1
1
Coss
Crss
10
Drain-source voltage VDS (V)
100
SSM6K403TU
IDR – VDS
10
1
0.1
0.01
0.001
0
25 °C
Ta =100 °C
Common Source
VGS = 0 V
D
G IDR
−25 °C
S
–0.5
–1.0
–1.5
Drain-source voltage VDS (V)
1000
toff
tf
100
t – ID
Common Source
VDD = 10 V
VGS = 0 ∼ 2.5 V
Ta = 25 °C
RG = 4.7 Ω
ton
10
tr
1
0.01
0.1 1
Drain current ID (A)
10
Dynamic Input Characteristic
10
Common Source
ID = 4.2A
8 Ta = 25°C
6
VDD=10V
VDD=16V
4
2
0
0 10 20 30 40 50
Total Gate Charge Qg (nC)
5
2007-11-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSM6K403TU.PDF ] | |
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