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PDF SSM3K131TU Data sheet ( Hoja de datos )
| Número de pieza | SSM3K131TU | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM3K131TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
SSM3K131TU
○ High-Speed Switching Applications
• 4.5-V drive
• Low ON-resistance : Ron = 41.5 mΩ (max) (@VGS = 4.5 V)
: Ron = 27.6 mΩ (max) (@VGS = 10 V)
2.1±0.1
1.7±0.1
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Symbol
VDSS
Rating
30
Unit
V
1
23
Gate-Source voltage
VGSS ±20 V
Drain current
DC
Pulse
ID (Note 1)
IDP (Note 1)
6.0
12.0
A
Drain power dissipation
PD (Note 2)
PD (Note 3)
800
500
mW
t = 10 s
1000
Channel temperature
Tch 150 °C
1: Gate
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
UFM
2: Source
3: Drain
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEITA
―
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-2U1A
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
Weight: 6.6mg (typ.)
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on a ceramic board. (25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2)
Note 3: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 4: Pulse test
Symbol
V (BR) DSS
V (BR) DSX
IDSS
IGSS
Vth
⏐Yfs⏐
RDS (ON)
Ciss
Coss
Crss
Qg
Qgs
Qgd
ton
toff
VDSF
Test Conditions
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -20 V
VDS = 30 V, VGS = 0 V
VGS = ± 20 V, VDS = 0 V
VDS = 5 V, ID = 1 mA
VDS = 5 V, ID = 4 A
ID = 4.0 A, VGS = 10 V
ID = 2.0 A, VGS = 4.5 V
(Note 4)
(Note 4)
(Note 4)
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, ID = 6.0 A
VGS = 10 V
VDD = 15 V, ID = 2.0 A,
VGS = 0 to 4.5 V, RG = 10 Ω
ID = -6.0 A, VGS = 0 V
(Note 4)
Min
30
15
⎯
⎯
1.3
11.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
23.0
20.5
27.0
450
120
77
10.1
7.6
2.5
21
15
-0.85
Max
⎯
⎯
1
±0.1
2.5
⎯
27.6
41.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1.2
Unit
V
μA
μA
V
S
mΩ
pF
nC
ns
V
1 2008-12-10
1 page  
Rth – tw
600
c
b
100
a
10
Single pulse
a: Mounted on ceramic board
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2)
b: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
c: Mounted on FR4 Board
1 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad : 0.36 mm2×3)
0.001 0.01
0.1
1
10 100 600
Pulse Width tw (s)
SSM3K131TU
PD – Ta
1000 a: Mounted on ceramic board
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm2)
b: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
800 a
600
b
400
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2008-12-10
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM3K131TU.PDF ] | |
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