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PDF SSD1030P Data sheet ( Hoja de datos )
| Número de pieza | SSD1030P | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | South Sea Semiconductor | |
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SSD1030P
P-Channel Enhancement Mode MOSFET
VDS (V)
-30V
Product Summary
ID (A)
RDS(ON) (mΩ) Max
65 @VGS = - 10V
-15A
115 @VGS = - 5V
130 @VGS = - 4.5V
TO-252
D
G
S
D
FEATURES
Super high density cell design for low RDS(ON).
Rugged and reliable.
TO-252 package.
Pb free.
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS -30
Gate-Source Voltage
Drain Current-Continuous @ TJ = 125oC
-Pulsed b
VGS +- 25
ID -15
IDM -30
Drain-Source Diode Forward Current a
IS -1.7
Maximum Power Dissipationa
PD 50
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
R JC
R JA
3
50
Unit
V
V
A
A
A
W
oC
o
C/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, January 2008 (Rev 2.1)
1
1 page  
VGS
VDD
VIN RL
D
RGEN G
S
VOUT
Figure 11. Switching Test Circuit
SSD1030P
td(on)
VOUT
ton
tr
90%
10%
td(off)
toff
90%
tf
10%
VIN 10%
50%
50%
INVERTED
PULSE WIDTH
90%
Figure 12. Switching Waveforms
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.001
0.01 0.1 1 10 100
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
1000
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, January 2008 (Rev 2.1)
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSD1030P.PDF ] | |
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