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PDF SSD45N03 Data sheet ( Hoja de datos )
| Número de pieza | SSD45N03 | |
| Descripción | N-Channel Enhancement Mode Power Mos.FET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
SSD45N03
45A, 25V,RDS(ON)9m
N-Channel Enhancement Mode Power Mos.FET
Description
The SSD45N03 provide the designer with the best combination
of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-252 is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
TO-252
Features
* RoHS Compliant
* Low Gate Charge
* Simple Drive Requirement
* Fast Switching Speed
D
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current,VGS@10V
Continuous Drain Current,VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
2
Single Pulse Avalanche Energy
Avalanche Current
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.20 2.80
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Symbol
VDS
VGS
ID@TC=25oC
ID@TC=100oC
IDM
PD@TC=25oC
EAS
IAR
Tj, Tstg
Max.
Max.
Symbol
Rthj-c
Rthj-a
Ratings
25
± 20
45
32
150
50
0.4
150
25
-55~+150
Ratings
2.5
110
Unit
V
V
A
A
A
W
W / oC
mJ
A
oC
Unit
oC /W
oC /W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSD45N03.PDF ] | |
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