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PDF SSD40N04-20D Data sheet ( Hoja de datos )

Número de pieza SSD40N04-20D
Descripción N-Ch Enhancement Mode Power MOSFET
Fabricantes SeCoS 
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Elektronische Bauelemente
SSD40N04-20D
N-Ch Enhancement Mode Power MOSFET
39A, 40V, RDS(ON) 22mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density process.
Low RDS(on) assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry. Typical applications are
PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Low side high current DC-DC Converter applications.
PRODUCT SUMMARY
VDS(V)
40
PRODUCT SUMMARY
RDS(on) m(
22@VGS= 10V
27@VGS= 4.5V
ID(A)
39
36
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
Millimeter
Millimeter
REF. Min. Max. REF. Min. Max.
A 6.4
6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20

Drain

Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Total Power Dissipation a
VDS
VGS
ID @TA=25
IDM
IS
PD @TA=25
40
±20
39
40
30
50
Operating Junction and Storage Temperature Range TJ, TSTG
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
Maximum Thermal Resistance Junction-Case
RθJC
3.0
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.

Source
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
24-Sep-2010 Rev.C
Any changes of specification will not be informed individually.
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