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PDF SSS2321 Data sheet ( Hoja de datos )
| Número de pieza | SSS2321 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | South Sea Semiconductor | |
| Logotipo |  |
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SSS2321
P-Channel Enhancement Mode MOSFET
VDS (V)
-20V
Product Summary
ID (A)
RDS(ON) (mΩ) Max
60 @VGS = -4.5V
-3.4A
80 @VGS = -2.5V
125 @VGS = -1.8V
FEATURES
ȟ!Super high dense cell design for low RDS(ON).
ȟ!Rugged and reliable.
ȟ!SOT-23 package.
ȟ!Pb Free.
SOT-23
D
YW
G
S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS -20
Gate-Source Voltage
Drain Current-Continuous @ TJ = 125oC
-Pulsed b
VGS +- 8
ID -3.4
IDM -12
Drain-Source Diode Forward Current a
IS -0.74
Maximum Power Dissipation a
PD 0.89
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RįJA
115
Unit
V
V
A
A
A
W
oC
oC/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, September 2007 (Rev 2.2)
1
1 page  
SSS2321
VGS
VDD
VIN RL
D
RGEN G
S
VOUT
Figure 11. Switching Test Circuit
10
td(on)
VOUT
ton
tr
td(off)
90%
10%
toff
90%
tf
10%
VIN 10%
50%
50%
INVERTED
PULSE WIDTH
90%
Figure 12. Switching Waveforms
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.0.5
PDM
t1
t2
0.02
1. RįJA(t) = r(t)*RįJA
0.01
2. RįJA = see datasheet
Single Pulse
3. TJM - TA = PDM*RįJA(t)
4. Duty Cycle, D = t1/t2
0.01
10 -5
10-4
10-3
10-2
10-1
1
10 10 2 10 3
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSS2321.PDF ] | |
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