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PDF SSS2309 Data sheet ( Hoja de datos )

Número de pieza SSS2309
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes South Sea Semiconductor 
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No Preview Available ! SSS2309 Hoja de datos, Descripción, Manual

SSS2309
P-Channel Enhancement Mode MOSFET
VDS (V)
-20V
Product Summary
ID (A)
RDS(ON) (mΩ) Max
-2.3A
130 @VGS = -4.5V
190 @VGS = -2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
SOT-23
D
G
S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS -20
Gate-Source Voltage
Drain Current-Continuous @ TJ = 25oC
b
-Pulsed
VGS +- 10
ID -2.3
IDM -8
Drain-Source Diode Forward Current a
IS -1.25
Maximum Power Dissipation a
PD 1.25
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
R JA
100
Unit
V
V
A
A
A
W
oC
oC/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, August 2005 (Rev 2.0)
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SSS2309 pdf
SSS2309
VGS
VDD
VIN RL
D
RGEN G
S
VOUT
Figure 11. Switching Test Circuit
10
td(on)
VOUT
ton
tr
td(off)
90%
10%
toff
90%
tf
10%
VIN 10%
50% 50%
INVERTED
PULSE WIDTH
90%
Figure 12. Switching Waveforms
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.0.5
PDM
t1
t2
0.02
1. R JA(t) = r(t)*R JA
0.01
2. R JA = see datasheet
Single Pulse
3. TJM - TA = PDM*R JA(t)
4. Duty Cycle, D = t1/t2
0.01
10 -5
10-4
10-3
10-2
10-1
1
10 10 2 10 3
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, August 2005 (Rev 2.0)
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