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PDF SSD3030N Data sheet ( Hoja de datos )
| Número de pieza | SSD3030N | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | South Sea Semiconductor | |
| Logotipo |  |
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SSD3030N
N-Channel Enhancement Mode MOSFET
VDS (V)
30V
Product Summary
ID (A)
RDS(ON) (m ) Max
17 @VGS = 10V
30A
35 @VGS = 4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 package.
Pb Free.
TO-252
D
G
S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25oC
-Pulsed b
Drain-Source Diode Forward Current a
Maximum Power Dissipationa@TC = 25oC
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
30
+- 20
30
70
20
50
-55 to 175
V
V
A
A
A
W
oC
R JC
R JA
3
oC/W
50
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, November 2006 (Rev 2.1)
1
1 page  
SSD3030N
VGS
VDD
VIN RL
D
RGEN G
S
VOUT
td(on)
VOUT
ton
tr
td(off)
90%
10% INVERTED
toff
90%
tf
10%
VIN 10%
50%
90%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.0.5
0.02
0.01
0.01
10 -5
Single Pulse
10-4
10-3
10-2
PDM
t1
t2
1. R JA(t) = r(t)*R JA
2. R JA = see datasheet
3. TJM - TA = PDM*R JA(t)
4. Duty Cycle, D = t1/t2
10-1
1
10
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSD3030N.PDF ] | |
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