|
|
PDF SSM8405 Data sheet ( Hoja de datos )
| Número de pieza | SSM8405 | |
| Descripción | Dual Enhancement Mode MOSFET | |
| Fabricantes | South Sea Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SSM8405 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
SSM8405
Dual Enhancement Mode MOSFET
Product Summary (N-Channel)
VDS (V)
ID (A)
30V 7A
RDS(ON) (mΩ) Max
25 @VGS = 10V
35 @VGS = 5V
40 @VGS = 4.5V
Product Summary (P-Channel)
VDS (V)
ID (A)
RDS(ON) (mΩ) Max
45 @VGS = - 10V
- 30V
- 5A
75 @VGS = - 5V
90 @VGS = - 4.5V
8
7
6
5
SO-8
1
2
3
4
D1 (7,8)
D2 (5,6)
G1 (2)
G2 (4)
S1 (1)
S2 (3)
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Limited Limited
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ Ta
-Pulsed b
25 oC
70 oC
VDS
VGS
ID
IDM
30 -30
V
+- 25 +- 25
7 -5
6 -4.5
30 -20 A
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Ta=25 oC
Ta=70 oC
IS
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
1.6 -1.6
2.0
1.44
-55 to 150
W
oC
TTHHEERRMMAALL CCHHARRAACCTTEERRISISTTICICSS
Thermal Resistance, Junction-to-Ambient a
R JA
62.5
o
C/W
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, October 2007 (Rev 3.0)
1 of 10
1 page  
SSM8405
N-Channel
P-Channel
2.2
VGS = 10V
1.8 ID = 6.9A
1.4
1.0
0.8
0.4
0.0
-50
-25 0 25 50 75 100 125
Tj, Junction Tempertature ( OC)
150
Figure 4. On-Resistance Variation
with Temperature
1.6
VDS = VGS
1.4 ID = 250 A
1.2
1.0
0.8
0.6
0.4
-55
-25 0 25 50 75 100 125
Tj, Junction Temperature ( oC)
150
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID = 250 A
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25 0 25 50 75 100 125
Tj, Junction Temperature ( oC)
150
Figure 6. Breakdown Voltage Variation
with Temperature
1.8
VGS = -10V
1.6 VGS =-5A
1.4
1.2
1.0
0.8
0.6
-50
0 50 100 150
Tj, Junction Tempertature ( OC)
Figure 4. On-Resistance Variation
with Temperature
1.6
VDS = VGS
1.4 ID = -250 A
1.2
1.0
0.8
0.6
0.4
-55
-25 0 25 50 75 100 125
Tj, Junction Temperature ( oC)
150
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID = -250 A
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25 0 25 50 75 100 125
Tj, Junction Temperature ( oC)
150
Figure 6. Breakdown Voltage Variation
with Temperature
South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice.
South Sea Semiconductor, October 2007 (Rev 3.0)
5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SSM8405.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SSM8405 | Dual Enhancement Mode MOSFET | South Sea Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |