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PDF Si6991DQ Data sheet ( Hoja de datos )
| Número de pieza | Si6991DQ | |
| Descripción | Dual P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
Si6991DQ
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.040 @ VGS = - 10 V
- 30
0.068 @ VGS = - 4.5 V
ID (A)
- 4.2
- 3.2
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
D Battery Switch
TSSOP-8
D1 1 D
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
Top View
Ordering Information: Si6991DQ T-1
S1
G1
S2
G2
D1
P-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 4.2
- 3.3
- 1.0
1.14
0.73
- 30
"20
- 30
- 55 to 150
- 3.6
- 2.8
- 0.70
0.83
0.53
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72230
S-31066—Rev. A, 26-May-03
Symbol
RthJA
RthJF
Typical
86
124
59
Maximum
110
150
75
Unit
_C/W
www.vishay.com
1
1 page  
New Product
Si6991DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72230
S-31066—Rev. A, 26-May-03
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet Si6991DQ.PDF ] | |
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