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PDF Si4810BDY Data sheet ( Hoja de datos )
| Número de pieza | Si4810BDY | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si4810BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
30
rDS(on) (Ω)
0.0135 at VGS = 10 V
0.020 at VGS = 4.5 V
ID (A)
10
8
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
Diode Forward Voltage
VSD (V)
0.53 at 3.0 A
IF (A)
3.8
FEATURES
• TrenchFET® Power MOSFETS
• Fast Switching Speed
• Low Gate Charge
• 100 % UIS and Rg Tested
Pb-free
Available
RoHS*
COMPLIANT
APPLICATIONS
• DC-DC Logic Level
• Low Voltage and Battery Powered Applications
SO-8
D
S1
S2
S3
G4
Top View
8D
7 D Ordering Information:
6 D Si4810BDY-T1
Si4810BDY-T1-E3 (Lead (Pb)-free)
5D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
30
VDS 30
Gate-Source Voltage (MOSFET)
VGS
± 20
Continuous Drain Current (TJ = 150 °C) (MOSFET)a
TA = 25 °C
TA = 70 °C
ID
10 7.5
86
Pulsed Drain Current (MOSFET)
IDM 50
Continuous Source Current (MOSFET Diode Conduction)a
IS 2.3 1.25
Average Forward Current (Schottky)
IF 3.8 2.4
Pulsed Forward Current (Schottky)
IFM 40
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
20
20
Maximum Power Dissipation (MOSFET)a
Maximum Power Dissipation (Schottky)a
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
PD
2.5 1.38
1.6 0.88
2.0 1.31
1.3 0.84
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum Junction-to-Ambient (t ≤ 10 sec)a
Maximum Junction-to-Ambient (t = Steady State)a
MOSFET
Schottky
MOSFET
Schottky
RthJA
36
44
73
77
Maximum Junction-to-Foot (t = Steady State)a
MOSFET
Schottky
RthJF
17
24
Notes:
a. Surface Mounted on FR4 Board.
For SPICE model information vis the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 72229
S-70138-Rev. C, 22-Jan-07
Maximum
50
60
90
95
21
30
Unit
°C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
Si4810BDY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (sec)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
600
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72229
Document Number: 72229
S-70138-Rev. C, 22-Jan-07
www.vishay.com
5
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