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PDF APTGT150DU170G Data sheet ( Hoja de datos )

Número de pieza APTGT150DU170G
Descripción IGBT Power Module
Fabricantes Microsemi 
Logotipo Microsemi Logotipo



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APTGT150DU170G
Dual common source
Trench + Field Stop IGBT®
Power Module
VCES = 1700V
IC = 150A @ Tc = 80°C
C1 C2
Q1
G1
Q2
G2
E1 E2
E
G1 C1 E C2
E1
E2
G2
Application
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Features
Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
250
150
300
±20
890
300A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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APTGT150DU170G pdf
APTGT150DU170G
Operating Frequency vs Collector Current
20
15 ZVS
10 ZCS
VCE=900V
D=50%
RG= 4. 7
TJ=125°C
TC=75°C
5
hard
switc hing
0
0 40 80 120 160 200 240
IC (A)
Forward Characteristic of diode
300
250
TJ=25°C
200
150
100
50 TJ=125°C
TJ= 125°C
0
0 0.5 1 1.5 2 2.5 3
VF (V)
0.3
0.25
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Diode
0.9
0.2 0.7
0.15
0.1
0.5
0.3
0.05 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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