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PDF APTGT150A60T3AG Data sheet ( Hoja de datos )
| Número de pieza | APTGT150A60T3AG | |
| Descripción | IGBT Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTGT150A60T3AG
Phase leg
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 150A @ Tc = 100°C
29 30 31 32
13
4
3
26 27 28
22 23 25
R1
8
7
16 18 19 20
14
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Pins 29/30/31/32 must be shorted together
Pins 26/27/28/22/23/25 must be shorted together
to achieve a phase leg
Pins 16/18/19/20 must be shorted together
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
• Kelvin emitter for easy drive
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 100°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
225
150
300
±20
600
300A @ 550V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
1 page  
APTGT150A60T3AG
Operating Frequency vs Collector Current
120
100 ZVS
VCE=300V
D=50%
80
ZCS
RG=3.3Ω
TJ=150°C
Tc=85°C
60
40 Hard
20 switching
0
0 50 100 150 200 250
IC (A)
Forward Characteristic of diode
300
250
200
150
100
50
0
0
TJ=125°C
TJ=150°C
TJ=25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
Diode
0.4 0.9
0.7
0.3
0.5
0.2
0.3
0.1 0.1
0 0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT150A60T3AG.PDF ] | |
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