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PDF APTGT150DA60T1G Data sheet ( Hoja de datos )
| Número de pieza | APTGT150DA60T1G | |
| Descripción | IGBT Power Module | |
| Fabricantes | Microsemi | |
| Logotipo |  |
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APTGT150DA60T1G
Boost chopper
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 150A* @ Tc = 80°C
56
CR1
11
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
3
4 NTC
Q2
CR2
9
10
12
12
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 150°C
Max ratings
600
225 *
150 *
350
±20
480
300A @ 550V
Unit
V
A
V
W
Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater
than 30°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–5
1 page  
APTGT150DA60T1G
Operating Frequency vs Collector Current
120
VCE=300V
100
ZCS
80
ZVS
D=50%
RG=3.3Ω
TJ=150°C
Tc=85°C
60
40
20
0
0
Hard
switching
50
100
IC (A)
150
200
Forward Characteristic of diode
300
250
200
150
100
50
0
0
TJ=125°C
TJ=150°C
TJ=25°C
0.4 0.8 1.2 1.6
VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.6
0.5 0.9
Diode
0.4 0.7
0.3 0.5
0.2 0.3
0.1 0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
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