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PDF STS2321 Data sheet ( Hoja de datos )
| Número de pieza | STS2321 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | SamHop Microelectronics | |
| Logotipo |  |
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STS2321
SamHop Microelectronics Corp.
Oct .29 2004 V1.1
P-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
-20V
-3.2A
RDS(ON) ( m W ) Max
65 @ VGS = -4.5V
90 @ VGS =-2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
SOT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @TJ=25 C
-Pulsed b
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-20
10
-3.2
-11
-1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RthJA
100
C/W
1
1 page  
STS2321
VDD
5 VIN RL
D VOUT
VGS
RGEN G
S
Figure 11. Switching Test Circuit
10
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
VIN
10%
50%
90%
50%
PULSE WIDTH
Figure 12. Switching Waveforms
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
0.0001
Single Pulse
PDM
t1
t2
on 1. RthJA (t)=r (t) * RthJA
2. RthJA=See Datasheet
3. TJM-TA = PDM* R thJA (t)
4. Duty Cycle, D=t1/t2
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
10
100
1000
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STS2321.PDF ] | |
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