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PDF AM4835P Data sheet ( Hoja de datos )
| Número de pieza | AM4835P | |
| Descripción | P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Analog Power | |
| Logotipo |  |
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Analog Power
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
• Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SO-8 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Extended VGS range (±25) for battery pack
applications
AM4835P
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
-30 19 @ VGS = -10V
30 @ VGS = -4.5V
ID (A)
-9.5
-7.5
18
27
36
45
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-30 V
±25
-9.5
-8.3 A
±50
Continuous Source Current (Diode Conduction)a
IS -2.1 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
TJ, Tstg
3.1
2.6
-55 to 150
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Casea
t <= 5 sec
Maximum Junction-to-Ambienta
t <= 10 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RθJC
RθJA
Maximum
25
50
Units
oC/W
oC/W
September, 2003 - Rev. B
PRELIMINARY
1 Publication Order Number:
DS-AM4835_G
1 page  
Analog Power
Package Information
SO-8: 8LEAD
AM4835P
H x 45°
September, 2003 - Rev. B
PRELIMINARY
5 Publication Order Number:
DS-AM4835_G
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AM4835P.PDF ] | |
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