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Número de pieza | SSM6K31FE | |
Descripción | Silicon P Channel MOS Type | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSM6K31FE (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Silicon P Channel MOS Type ( -MOS )
SSM6K31FE
High speed switching
DC-DC Converter
• small package
• Low RDS (ON)
: Ron = 240 mΩ (typ) (@VGS = 10 V)
: Ron = 400 mΩ (typ) (@VGS = 4 V)
SSM6K31FE
Unit: mm
Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Symbol
Rating
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
DC
Pulse
VDS
VGSS
ID
IDP
PD (Note 1)
Tch
Tstg
20
±20
1.2
2.4
500
150
−55~150
Note 1:Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Unit
V
V
A
mW
°C
°C
Marking
Circuit (top view)
Equivalent
1,2,5,6 : Drain
3 : Gate
4 : Source
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
654
654
B
123
123
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the
environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use
containers and other objects that are made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area. When using this device, please take heat
dissipation fully into account.
1 2003-12-19
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet SSM6K31FE.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM6K31FE | Silicon P Channel MOS Type | Toshiba Semiconductor |
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