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PDF SSM6K208FE Data sheet ( Hoja de datos )
| Número de pieza | SSM6K208FE | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM6K208FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K208FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
Unit: mm
• 1.8V drive
• Low ON-resistance:
Ron = 296mΩ (max) (@VGS = 1.8 V)
Ron = 177mΩ (max) (@VGS = 2.5 V)
Ron = 133mΩ (max) (@VGS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD (Note 1)
Tch
Tstg
30
± 12
1.9
3.8
500
150
−55 to 150
V
V
A
mW
°C
°C
ES6
1,2,5,6: Drain
3 : Gate
4 : Source
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2N1A
reliability significantly even if the operating conditions (i.e.
Weight: 3mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm2 )
1 2007-11-13
1 page  
10
Common Source
VDS = 3 V
Ta = 25°C
3
|Yfs| – ID
1
0.3
0.1
0.01
0.1 1
Drain current ID (A)
10
1000
500
300
100
50
30
C – VDS
Ciss
Coss
10
5 Common Source
3 Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
1
Crss
10 100
Drain–source voltage VDS (V)
SSM6K208FE
IDR – VDS
10
1
0.1
0.01
0.001
0
25 °C
Ta =100 °C
Common Source
VGS = 0 V
D
G IDR
−25 °C
–0.5
–1.0
S
–1.5
Drain–source voltage VDS (V)
1000
toff
100 tf
t – ID
Common Source
VDD = 15 V
VGS = 0 ∼ 2.5 V
Ta = 25 °C
RG = 4.7 Ω
10
ton
tr
1
0.01
0.1 1
Drain current ID (A)
10
Dynamic Input Characteristic
10
Common Source
ID = 1.9 A
8 Ta = 25°C
6
VDD = 15 V
VDD = 24 V
4
2
0
0
1
2
3
4
5
Total Gate Charge Qg (nC)
5
2007-11-13
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSM6K208FE.PDF ] | |
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