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Número de pieza | SSM6J412TU | |
Descripción | Field Effect Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSM6J412TU (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! SSM6J412TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J412TU
○ Power Management Switch Applications
Unit: mm
• 1.5-V drive
• Low ON-resistance: RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
2.1±0.1
1.7±0.1
16
25
34
Drain-source voltage
VDSS -20 V
Gate-source voltage
Drain current
Power dissipation
Channel temperature
DC
Pulse
VGSS
ID
IDP (Note 1)
PD (Note 2)
Tch
±8
-4.0
-16.0
1
150
V
A
W
°C
UF6
1,2,5,6: Drain
3: Gate
4: Source
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
―
2-2T1D
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight : 7.0mg ( typ. )
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Pw ≤ 10μs, Duty. ≤ 1%
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm , Cu Pad: 645 mm2)
Marking (Top View)
6 54
Equivalent Circuit
654
KPH
123
1 23
1 2010-12-08
1 page Rth – tw
600
100
10
1
0.001
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm
×
1.6
mm,
Cu
Pad:
645
mm2)
0.01
0.1
1
10 100 1000
Pulse Width tw (s)
SSM6J412TU
1.25
DC
1.0
0.75
0.5
0.25
PD – Ta
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm ,
Cu Pad : 645 mm2)
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2010-12-08
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSM6J412TU.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM6J412TU | Field Effect Transistor | Toshiba Semiconductor |
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