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PDF SSM6J410TU Data sheet ( Hoja de datos )

Número de pieza SSM6J410TU
Descripción Field Effect Transistor
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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SSM6J410TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS)
SSM6J410TU
Power Management Switch Applications
High-Speed Switching Applications
Unit: mm
4-V drive
Low ON-resistance
RDS(ON) = 393mΩ (max) (@VGS = –4 V)
RDS(ON) = 216mΩ (max) (@VGS = –10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS -30 V
Gate-Source voltage
Drain current
Power dissipation
DC
Pulse
VGSS
ID (Note1)
IDP(Note1)
PD(Note2)
t = 10s
± 20
-2.1
-4.2
500
1000
V
A
mW
1,2,5,6 : Drain
3 : Gate
4 : Source
Channel temperature
Storage temperature range
Tch 150 °C
Tstg
55 to 150
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2T1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
Weight: 7.0mg (typ.)
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
654
KPG
123
Equivalent Circuit (top view)
654
123
1
2010-01-19

1 page




SSM6J410TU pdf
rth – tw
1000
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
100
10
1
0.001
0.01
0.1
1 10 100
Pulse width tw (s)
1000
SSM6J410TU
1000
800
600
DC
400
PD – Ta
Mounted on FR4 board
(25.4mm × 25.4mm × 1.6 mm,
Cu Pad : 645 mm2)
200
0
-40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5 2010-01-19

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