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PDF SSM3J56MFV Data sheet ( Hoja de datos )
| Número de pieza | SSM3J56MFV | |
| Descripción | Field Effect Transistor Silicon | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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SSM3J56MFV
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J56MFV
○ Load Switching Applications
• 1.2 V drive
• Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V)
RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Power dissipation
Channel temperature
Storage temperature range
VDSS
VGSS
ID (Note 1)
IDP (Note 1)
PD (Note 2)
PD (Note 3)
t < 5s
Tch
Tstg
-20
±8
-800
-1600
150
500
800
150
−55 to 150
V
V
mA
mW
°C
°C
VESM
1.Gate
2.Source
3.Drain
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-1L1B
operating temperature/current/voltage, etc.) are within the
Weight: 1.5mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.585 mm2)
Note 3: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Marking
3
Equivalent Circuit (top view)
3
PW
12
Handling Precaution
12
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance Rth (ch-a) and Power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration.
1 2011-05-09
1 page  
1000
100
Rth – tw
b
a
10
1
0.001
Single pulse
a: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6
mm,
Cu
Pad:
645
mm2)
b: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6
mm,
Cu
Pad:
0.585
mm2)
0.01
0.1
1
10 100 1000
Pulse Width tw (s)
SSM3J56MFV
600
a
500
400
PD – Ta
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm,
Cu Pad : 645 mm2)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6mm,
Cu Pad : 0.585 mm2)
300
200
b
100
0
0 50 100 150
Ambient temperature Ta (°C)
5 2011-05-09
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM3J56MFV.PDF ] | |
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