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PDF TK2Q60D Data sheet ( Hoja de datos )
| Número de pieza | TK2Q60D | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TK2Q60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK2Q60D
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 3.2 Ω(typ.)
• High forward transfer admittance: |Yfs| = 1.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
2
8
60
101
2
6.0
150
−55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
0.9 1.1 ± 0.2
0.6 MAX.
2.3 2.3
123
0.8 MAX.
1.1 MAX.
0.6 ± 0.15
0.6 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.08 °C/W
125 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 44.1 mH, RG = 25Ω, IAR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
Start of commercial production
2009-03
1 2013-11-01
1 page  
rth – tw
10
TK2Q60D
1
Duty=0.5
0.2
0.1
0.1 0.05
0.01
10μ
0.02
0.01
100μ
Single pulse
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.08 °C/W
1m
10m
100m
1
10
Pulse width tw (s)
Safe operating area
100
10 ID max (Pulse) *
ID max (Continuous)
1
DC operation
Tc = 25°C
0.1
100 μs *
1 ms *
0.01
*
Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
1
10
VDSS max
100
Drain−source voltage VDS (V)
1000
EAS – Tch
160
120
80
40
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 44.1 mH
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2013-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TK2Q60D.PDF ] | |
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