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PDF TK16H60C Data sheet ( Hoja de datos )
| Número de pieza | TK16H60C | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TK16H60C
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK16H60C
Switching Regulator Applications
z Low drain−source ON resistance : RDS (ON) = 0. 32Ω (typ.)
z High forward transfer admittance : |Yfs| = 11S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 600 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
600
±30
16
64
150
979
16
15
150
−55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16K1A
Weight: 3.8 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.69 mH, RG = 25 Ω, IAR = 16 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1 2006-11-08
1 page  
TK16H60C
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.01
0.01
0.02
0.05
0.001
10μ
100μ
Single pulse
1ｍ 10ｍ
PDM
t
T
Duty = t/T
Rth (ch-c) = 0.833°C/W
100ｍ
1
10
Pulse width tw (s)
Safe operating area
100
ID max (Pulse) *
100 μs *
ID max (Continuous)
10 1 ms *
DC operation
1 Tc = 25°C
0.1
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100
Drain−source voltage VDS (V)
1000
EAS – Tch
1000
800
600
400
200
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 6.69 mH
Wave form
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-08
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TK16H60C.PDF ] | |
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