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PDF TK15X60U Data sheet ( Hoja de datos )
| Número de pieza | TK15X60U | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba Semiconductor | |
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TK15X60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
TK15X60U
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
600
±30
15
30
125
81
11
12.5
150
−55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-9F1C
Weight : 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.17 mH, RG = 25 Ω, IAR = 11 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
4
3
1 2010-08-20
1 page  
rth – tw
10
TK15X60U
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.01
10 μ
0.02 0.01
100 μ
Single pulse
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
1m
10 m
100 m
1
Pulse width tw (s)
10
Safe operating area
100
ID max (Pulse) *
ID max (Continuous)
10
100 μs *
1 ms *
DC operation
1 Tc = 25°C
0.1
* Single nonrepetitive
0.01
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1
1
10
VDSS max
100 1000
Drain−source voltage VDS (V)
EAS – Tch
100
80
60
40
20
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 1.17mH
ΕAS
=
1
2
⋅L ⋅I2
⋅ ⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2010-08-20
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TK15X60U.PDF ] | |
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