|
|
Número de pieza | TK4P55DA | |
Descripción | MOSFETs | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TK4P55DA (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TK4P55DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK4P55DA
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 2.0 Ω(typ.)
• High forward transfer admittance: |Yfs| = 1.8 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
6.6 ± 0.2
5.34 ± 0.13
Unit: mm
0.58MAX
Absolute Maximum Ratings (Ta = 25°C)
1.14MAX
0.76 ± 0.12
2.29
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
550
±30
3.5
14
80
121
3.5
8
150
−55 to 150
V
V
A
W
mJ
A
mJ
°C
°C
123
1. GATE
2. DRAIN
(HEAT SINK)
3. SOURCE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7K1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max Unit
1.56 °C/W
125 °C/W
2
Note 1:Ensure that the channel temperature does not exceed 150℃.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 17.1 mH, RG = 25 Ω, IAR = 3.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1 2009-08-07
1 page TK4P55DA
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1 0.05
0.01
10μ
0.02 0.01
100μ
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.56 °C/W
1m
10m
100m
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (pulsed) *
10
ID max (continuous)
1 DC operation
Tc = 25°C
100 μs *
1 ms *
0.1
*: SINGLE NONREPETITIVE
0.01 PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.001
1
10
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EAS – Tch
150
120
90
60
30
0
25 50 75 100 125 150
CHANNEL TEMPEATURE (INITIAL)
Tch(°C)
15 V
0V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 17.1 mH
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2009-08-07
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TK4P55DA.PDF ] |
Número de pieza | Descripción | Fabricantes |
TK4P55D | MOSFETs | Toshiba Semiconductor |
TK4P55DA | MOSFETs | Toshiba Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |