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PDF Si7668ADP Data sheet ( Hoja de datos )
| Número de pieza | Si7668ADP | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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N-Channel 30-V (D-S) MOSFET
Si7668ADP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.003 at VGS = 10 V
30
0.0034 at VGS = 4.5 V
ID (A)a
40
32
Qg (Typ.)
52 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
PowerPAK® SO-8
APPLICATIONS
• Low-Side DC/DC Comversion
- Notebook, Server, VRM Module
• Fixed Telecom
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
Bottom View
Ordering Information: Si7668ADP-T1-E3 (Lead (Pb)-free)
Si7668ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
± 12
V
TC = 25 °C
40
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
32
31b, c
Pulsed Drain Current
TA = 70 °C
IDM
25b, c
70
A
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
40
4.3b, c
Avalanche Current
Single-Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
50
125
mJ
TC = 25 °C
83
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
53
5.4b, c
W
TA = 70 °C
3.4b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
260
°C
Notes:
a. Based on TC = 70 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73326
S-83053-Rev. B, 29-Dec-08
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C unless noted
60
10
TJ = 150 °C
1
0.1 TJ = 25 °C
0.01
0.001
0.00
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
0.0
- 0.2
ID = 5 mA
- 0.4
- 0.6
ID = 250 µA
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by
RDS(on)*
10
Si7668ADP
Vishay Siliconix
0.020
0.016
ID = 20 A
0.012
0.008
0.004
TJ = 125 °C
0.000
0
TJ = 25 °C
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
160
120
80
40
0
0.001
0.01 0.1
1
Time (s)
Single Pulse Power
10
1 ms
10 ms
Document Number: 73326
S-83053-Rev. B, 29-Dec-08
1
0.1 TC = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.01 0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet Si7668ADP.PDF ] | |
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