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PDF TPCP8005-H Data sheet ( Hoja de datos )
| Número de pieza | TPCP8005-H | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCP8005-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPCP8005-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
0.33±0.05
0.05 M A
85
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 5.0 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 9.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 30 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30V)
• Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
11
44
1.68
0.84
78.7
11
0.137
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
0.475
1
0.65
2.9±0.1
4
S
0.025 S
0.17±0.02
B 0.05 M B
A
0.8±0.05
0.28
+0.1
-0.11
1.12+-00..1132
1.12+-00..1132
1. Source
2. Source
3. Source
4. Gate
5. Drain
6. Drain
7. Drain
8. Drain
0.28
+0.1
-0.11
JEDEC
―
JEITA
―
TOSHIBA
2-3V1K
Weight: 0.017 g (typ.)
Circuit Configuration
8765
1234
Marking (Note 5)
8765
8005H
※
1234
Lot No.
2007-12-25
1 page  
RDS (ON) – Ta
25
Common source
Pulse test
20
ID = 11A
2.8A,5.5A
15
VGS = 4.5 V
10
ID = 2.8A,5.5A,11A
5 VGS = 10 V
−80 −40
0
40
80 120 160
Ambient temperature Ta (°C)
TPCP8005-H
IDR – VDS
100
10
4.5
3
10
1
Common source
Ta = 25°C
Pulse test
VGS = 0 V
1
0
−0.2
−0.4
−0.6
−0.8
−1
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Crss
10
0.1 1 10
Drain-source voltage VDS (V)
100
Vth – Ta
3
2.5
2
1.5
1
Common source
0.5
VDS = 10 V
ID = 1 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.6
1.2
(2)
0.8
PD – Ta
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t = 10s
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
50
Common source
ID = 11 A
40 Ta = 25°C
Pulse test
30
VDS
20
VDD = 6 V
24 V
12 V
20
16
12
8
10 4
00
0
5
10 15 20
25 30
Total gate charge Qg (nC)
5 2007-12-25
5 Page | ||
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| PDF Descargar | [ Datasheet TPCP8005-H.PDF ] | |
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