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Número de pieza | PMN40UPE | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! PMN40UPE
20 V, single P-channel Trench MOSFET
13 August 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
• Low threshold voltage
• Fast switching
• Trench MOSFET technology
• 4 kV ESD protection
1.3 Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; ID = -3 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-8 -
8V
[1] - - -6 A
- 37 43 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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1 page NXP Semiconductors
PMN40UPE
20 V, single P-channel Trench MOSFET
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.33
0.2
0.5
0.25
0.1
0.05
10
0.02
0.01
0
aaa-004359
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-004360
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33
0.2
10
0.25
0.1
0.05
0.02
0 0.01
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tamb = 150 °C
PMN40UPE
All information provided in this document is subject to legal disclaimers.
Product data sheet
13 August 2012
Min Typ Max Unit
-20 - - V
-0.45 -0.7 -0.95 V
- - -1 µA
- - -15 µA
© NXP B.V. 2012. All rights reserved
5 / 14
5 Page NXP Semiconductors
5.3
PMN40UPE
20 V, single P-channel Trench MOSFET
1.475
5.05
1.475
1.5
(4×)
0.45
(2×)
1.45
(6×)
2.85
Fig. 20. Wave soldering footprint for SOT457 (TSOP6)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot457_fw
11. Revision history
Table 8. Revision history
Data sheet ID
Release date
PMN40UPE v.1
20120813
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
PMN40UPE
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 August 2012
© NXP B.V. 2012. All rights reserved
11 / 14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PMN40UPE.PDF ] |
Número de pieza | Descripción | Fabricantes |
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