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PDF PSMN016-100XS Data sheet ( Hoja de datos )
| Número de pieza | PSMN016-100XS | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN016-100XS
N-channel 100V 16 mΩ standard level MOSFET in TO220F
(SOT186A)
Rev. 4 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Isolated package
Suitable for standard level gate drive
1.3 Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
RDSon
drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 12; see Figure 13
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
VGS = 10 V; ID = 10 A; VDS = 50 V;
see Figure 14; see Figure 15
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 32.1 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω;
see Figure 3
Min Typ Max Unit
- - 100 V
- - 32.1 A
- - 46.1 W
- 13 16 mΩ
- 14.2 - nC
- 46.2 - nC
- - 138 mJ
1 page  
NXP Semiconductors
PSMN016-100XS
N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see Figure 5
vertical in free air
Min Typ Max Unit
- 3 3.25 K/W
- 55 - K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
10-1
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
10-1
003aag618
P δ = tp
T
tp
T
t
1 10 tp (s) 102
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Isolation characteristics
Table 6.
Symbol
Cisol
Visol(RMS)
Isolation characteristics
Parameter
isolation capacitance
RMS isolation voltage
Conditions
f = 1 MHz
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal
waveform; clean and dust free
Min Typ Max Unit
- 10 - pF
- - 2500 V
PSMN016-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PSMN016-100XS
N-channel 100V 16 mΩ standard level MOSFET in TO220F (SOT186A)
9. Revision history
Table 8. Revision history
Document ID
Release date
Data sheet status
Change notice
PSMN016-100XS v.4
Modifications:
20120306
Product data sheet
-
• Status changed from preliminary to product.
• Various changes to content.
PSMN016-100XS v.3 20111021
Preliminary data sheet -
Supersedes
PSMN016-100XS v.3
PSMN016-100XS v.2
PSMN016-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
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