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| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN7R0-100XS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F
(SOT186A)
Rev. 3 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Isolated package
Suitable for standard level gate drive
1.3 Applications
AC-to-DC power supply equipment
Motor control
Server power supplies
Synchronous rectification
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 15 A; VDS = 50 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω;
see Figure 3
Min Typ Max Unit
- - 100 V
- - 55 A
- - 57.7 W
- 5.4 6.8 mΩ
- 34 - nC
- 121 - nC
- - 420 mJ
1 page  
NXP Semiconductors
PSMN7R0-100XS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see Figure 5
vertical in free air
Min Typ Max Unit
- 2.35 2.6 K/W
- 55 - K/W
10
Zth(j-mb)
(K/W)
1
10-1
δ = 0.5
0.2
0.1
0.05
0.02
10-2
single shot
10-3
10-6
10-5
10-4
10-3
10-2
10-1
003aag576
P δ = tp
T
tp
T
t
1 10 tp (s) 102
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Cisol
Visol(RMS)
isolation capacitance
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal
waveform; clean and dust free
[1] -
-
10 -
pF
- 2500 V
[1] f = 1 MHz
PSMN7R0-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
PSMN7R0-100XS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
8. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
D1
D
E
P
q
T
L2
b1
L b2
123
b
e
e1
L1
wM
A
A1
mounting
base
j
K
Q
c
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b b1 b2 c D D1 E e e1 j
mm
4.6 2.9
4.0 2.5
0.9
0.7
1.1
0.9
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
1.7
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
OUTLINE
VERSION
IEC
REFERENCES
JEDEC
JEITA
SOT186A
3-lead TO-220F
(1)
K
L
L1
L2
max.
P
Q
0.6 14.4 3.30
0.4 13.5 2.79
3
3.2 2.6
3.0 2.3
EUROPEAN
PROJECTION
q T(2) w
3.0
2.6
2.5
0.4
ISSUE DATE
02-04-09
06-02-14
Fig 19. Package outline SOT186A (TO-220F)
PSMN7R0-100XS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
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