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| Número de pieza | PSMN016-100BS | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
Rev. 2 — 1 March 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 15 A; Tj = 100 °C; see
Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 30 A; VDS = 50 V;
see Figure 14; see Figure 15
VGS = 10 V; Tj(init) = 25 °C; ID = 60 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω
Min Typ Max Unit
- - 100 V
- - 57 A
- - 148 W
-55 -
175 °C
- - 28.8 mΩ
- 13 16 mΩ
- 15 - nC
- 49 - nC
- - 101 mJ
1 page  
NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
gate-source threshold voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 100 V; VGS = 0 V; Tj = 125 °C
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 15 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 13
RG internal gate resistance (AC) f = 1 MHz
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V;
see Figure 14
QGS
QGS(th)
gate-source charge
pre-threshold gate-source
charge
ID = 30 A; VDS = 50 V; VGS = 10 V;
see Figure 14;see Figure 15
ID = 30 A; VDS = 50 V; VGS = 10 V;
see Figure 14
QGS(th-pl)
post-threshold gate-source
charge
QGD gate-drain charge
ID = 30 A; VDS = 50 V; VGS = 10 V;
see Figure 14;see Figure 15
VGS(pl)
gate-source plateau voltage VDS = 50 V; see Figure 14;
see Figure 15
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
VDS = 50 V; RL = 1.7 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
Min Typ Max Unit
90 - - V
100 - - V
1- - V
234V
- - 4.8 V
- - 100 µA
-
0.05 5
µA
- 10 100 nA
- 10 100 nA
- - 28.8 mΩ
- 36.4 44.8 mΩ
- 13 16 mΩ
- 0.9 - Ω
- 40 - nC
- 49 - nC
- 12 - nC
- 7.75 - nC
- 4.25 - nC
- 15 - nC
- 4.5 - V
- 2404 - pF
- 189 - pF
- 113 - pF
- 17 - ns
- 23 - ns
- 36 - ns
- 18 - ns
PSMN016-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PSMN016-100BS
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
PSMN016-100BS v.2
Modifications:
20120301
Product data sheet
• Status changed from objective to product.
• Various changes to content.
PSMN016-100BS v.1 20111025
Objective data sheet
Change notice
-
-
Supersedes
PSMN016-100BS v.1
-
PSMN016-100BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
© NXP B.V. 2012. All rights reserved.
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