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Número de pieza | BUK6215-75C | |
Descripción | N-channel TrenchMOS FET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BUK6215-75C
N-channel TrenchMOS FET
Rev. 02 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Logic and standard level gate drive N-channel enhancement mode Field-Effect Transistor
(FET) in a plastic package using advanced TrenchMOS technology. This product has
been designed and qualified to the appropriate AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Compatable with logic and standard
level gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power
steering
Engine management
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot total power
dissipation
Tmb = 25 °C; see Figure 2
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 15 A; Tj = 25 °C;
see Figure 11
Min Typ Max Unit
- - 75 V
- - 57 A
- - 128 W
- 12.5 15 mΩ
1 page NXP Semiconductors
BUK6215-75C
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
- - 1.17 K/W
10
Zth(j-mb)
(K/W)
1 δ = 0.5
0.2
0.1
10-1 0.05
0.02
10-2 single shot
003aae742
P δ = tp
T
tp t
10-3
T
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6215-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page NXP Semiconductors
BUK6215-75C
N-channel TrenchMOS FET
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
BUK6215-75C v.2
20101004
Product data sheet
Modifications:
• Status changed from objective to product.
• Various changes to content.
BUK6215-75C v.1
20100908
Objective data sheet
Change notice
-
-
Supersedes
BUK6215-75C v.1
-
BUK6215-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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