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Número de pieza | BUK6228-55C | |
Descripción | N-channel TrenchMOS intermediate level FET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BUK6228-55C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 4 October 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard and logic level
gate drive sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V Automotive systems
Electric and electro-hydraulic power
steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
Dynamic characteristics
QGD gate-drain charge
Conditions
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Tmb = 25 °C; see Figure 2
VGS = 10 V; ID = 10 A;
Tj = 25 °C; see Figure 11
ID = 31 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
ID = 25 A; VDS = 44 V;
VGS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
- - 55 V
- - 31 A
- - 60 W
- 24.8 29 mΩ
- - 25 mJ
- 5.76 - nC
1 page NXP Semiconductors
BUK6228-55C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see Figure 4
Min Typ Max Unit
- - 2.52 K/W
003aae912
10
Zth(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10-1 0.02
single shot
P δ = tp
T
tp t
10-2
T
10-6
10-5
10-4
10-3
10-2
10-1 tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6228-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page NXP Semiconductors
8. Revision history
Table 7. Revision history
Document ID
Release date
BUK6228-55C v.1
20101004
BUK6228-55C
N-channel TrenchMOS intermediate level FET
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BUK6228-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 4 October 2010
© NXP B.V. 2010. All rights reserved.
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BUK6228-55C | N-channel TrenchMOS intermediate level FET | NXP Semiconductors |
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