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PDF BR93H66-W Data sheet ( Hoja de datos )
| Número de pieza | BR93H66-W | |
| Descripción | Microwire BUSSerialEEPROMs | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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TECHNICAL NOTE
HIGH GRADE Specification HIGH RELIABILITY series
Microwire BUS Serial EEPROMs
Supply voltage 2.7V~5.5V
Operating temperature –40°C~+125°C type
BR93H56-W, BR93H66-W, BR93H76-W, BR93H86-W
Description
BR93H -W series is a serial EEPROM of serial 3-line interface method.
Features
. Withstands electrostatic voltage 8kV, (twice more than other series) (HBM method typ.)
. Wide action range -40 ˚C ~ +125 ˚C
(-40˚C ~ +85˚C, -40˚C ~ +105˚C in other series)
• Conforming to Microwire BUS
. Highly reliable connection by Au pad and Au wire
• Address auto increment function at read action
• Write mistake prevention function
Write prohibition at power on
Write prohibition by command code
Write mistake prevention circuit at low voltage
. Program cycle auto delete and auto end function
. Program condition display by READY / BUSY
. Low current consumption
At write action (5V) : 0.6mA (Typ.)
At read action (5V) : 0.6mA (Typ.)
At standby action (5V) : 0.1µA (Typ.)
. Built-in noise filter CS, SK, DI terminals
. Compact package SOP8, SOP-J8
. High reliability by ROHM original Double-Cell structure
. High reliability ultrafine CMOS process
. Data rewrite up to 1,000,000 times
. Data kept for 40 years• Easily connectable with serial port BR93H series
. Data at shipment all addresses FFFFh
Capacity
2Kbit
4Kbit
8Kbit
16Kbit
Bit format
Type
Package type
128 × 16 BR93H56-W
256 × 16 BR93H66-W
512 × 16 BR93H76-W
1K × 16 BR93H86-W
Power source voltage
2.7V ~ 5.5V
2.7V ~ 5.5V
2.7V ~ 5.5V
2.7V ~ 5.5V
SOP8
F RF
●
●
●
●
SOP-J8
FJ RFJ
●
●
●
●
SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J
FV RFV FVT RFVT RFVM RFVJ
Ver.B Oct. 2005
1 page  
300
250
SPEC
200
150 Ta=125˚C
Ta=25˚C
100
Ta=-40˚C
50
0
2
120
100
345
SUPPLY VOLTAGE : VCC (V)
Fig.17 CS low time tCS
SPEC
6
80
60
40
Ta=25˚C Ta=125˚C
20
0
Ta=-40˚C
-202 3 4 5
SUPPLY VOLTAGE : VCC (V)
Fig.20 DI hold time tDIH
350
SPEC
300
6
250
200
Ta=125˚C
150
100 Ta=25˚C
50
Ta=-40˚C
0
23456
SUPPLY VOLTAGE : VCC (V)
Fig.23 Data "0" output delay time tPD0
12
SPEC
10
8 Ta=125˚C
Ta=25˚C
6
Ta=-40˚C
4
2
02 3 4 5 6
SUPPLY VOLTAGE : VCC (V)
Fig.26 Write cycle time tE/W
250
200
Ta=125˚C
150
Ta=25˚C
100
Ta=-40˚C
50
SPEC
02 3 4 5 6
SUPPLY VOLTAGE : VCC (V)
Fig.18 CS setup time tCSS
50
SPEC
0
-50
-100
-150
-200
-250
-300
-350 Ta=25˚C Ta=125˚C
-400
Ta=-40˚C
-450
2345
SUPPLY VOLTAGE : VCC (V)
Fig.21 CS hold time tCSH
6
250
SPEC
200
150
Ta=125˚C
100
Ta=25˚C
50
Ta=-40˚C
0
23456
SUPPLY VOLTAGE : VCC (V)
Fig.24 Time from CS to output establishment tSV
120
SPEC
100
80
60
40 Ta=125˚C
Ta=25˚C
Ta=-40˚C
20
02 3 4 5 6
SUPPLY VOLTAGE : VCC (V)
Fig.19 DI setup time tDIS
350
SPEC
300
250
200
Ta=125˚C
150
100
Ta=25˚C
50 Ta=-40˚C
0
23456
SUPPLY VOLTAGE : VCC (V)
Fig.22 Data "1" output delay time tPD1
250
SPEC
200
150
Ta=125˚C
100
Ta=25˚C
50 Ta=-40˚C
0
23456
SUPPLY VOLTAGE : VCC (V)
Fig.25 Time from CS to High-Z tDF
5/16
5 Page 
3) I/O peripheral circuit
3-1) Pull down CS.
By making CS = "L" at power ON/OFF, mistake in action and mistake write are prevented.
Refer to the item 6) Notes at power ON/OFF in page 15.
Pull down resistance Rpd of CS pin
To prevent operation and write error at power ON/OFF, CS pull down resistance is necessary. Select an appropriate resistance value
from microcontroller VOH, IOH, and VIL characteristics of this IC.
Microcontroller
VOHM
EEPROM
VIHE
"H" output
IOHM
Rpd
"L" input
Rpd
VOHM
VOHM
...
IOHM
VIHE . . .
Example) When Vcc = 5V, VIHE = 2V, VOHM = 2.4V, IOHM = 2mA,
from the equation ,
2.4
Rpd 2×10-3
Rpd 1.2 (k )
Fig.41 CS pull down resistance
With the value of Rpd to satisfy the above equation, VOHM becomes
2.4V or higher, and with VIHE (= 2.0V), the equation is also satisfied.
. VIHE : EEPROM VIH specifications
. VOHM : microcontroller VOH specifications
. IOHM : microcontroller IOH specifications
3-2) DO is available in both pull up and pull down.
DO output become "High-Z" in other READY / BUSY output timing than after data output at read command and write command.
When malfunction occurs at "High-Z" input of the microcontroller port connected to DO, it is necessary to pull down and pull up DO.
When there is no influence upon the microcontroller actions, DO may be OPEN.
If DO is OPEN, and at timing to output status READY, at timing of CS = "H", SK = "H", DI = "H", EEPROM recognizes this as a start bit,
resets READY output, and DO = "High-Z", therefore, READY signal cannot be detected. To avoid such output, pull up DO pin for
improvement.
CS CS "H"
SK
DI D0
Enlarged
SK
DI
High-Z
DO
BUSY
READY
Fig.42 READY output timing at DO = OPEN
DO BUSY
High-Z
CS=SK=DI="H"
When DO=OPEN
Improvement by DO pull up
DO BUSY
READY
CS=SK=DI="H"
When DO=pull up
Pull up resistance Rpu and pull down resistance Rpd of DO pin
As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller VIH, VIL,
and VOH, IOH, VOL, IOL characteristics of this IC.
Microcontroller
EEPROM
Rpu
VCC-VOLE
IOLE
...
VOLE
VILM
...
Rpu
VILM
IOLE
Example) When Vcc = 5V, VOLE = 0.4V, IOLE = 2.1mA, VILM = 0.8V,
VOLE
from the equation ,
"L" input
5-0.4
Rpu
2.1×10-3
Rpu 2.2 (k )
"L" output
With the value of Rpu to satisfy the above equation, VOLE becomes
0.4V or below, and with VILM (= 0.8V), the equation is also satisfied.
Fig43 DO pull up resistance
. VOLE : EEPROM VOL specifications
. IOLE : EEPROM IOL specifications
. VILM : microcontroller VIL specifications
11/16
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet BR93H66-W.PDF ] | |
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