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PDF BSS138PW Data sheet ( Hoja de datos )
| Número de pieza | BSS138PW | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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BSS138PW
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
VDS
VGS
ID
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
RDSon
drain-source on-state
resistance
Conditions
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C;
VGS = 10 V
Tj = 25 °C;
VGS = 10 V;
ID = 300 mA
Min Typ Max Unit
- - 60 V
- - ±20 V
[1] - - 320 mA
[2] -
0.9 1.6 Ω
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
[2] Pulse test: tp ≤ 300 μs; δ ≤ 0.01.
1 page  
NXP Semiconductors
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1 0.05
10
0
0.02
0.01
017aaa028
1
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1 0.05
017aaa029
0 0.02
10 0.01
1
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BSS138PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
9. Package outline
Plastic surface-mounted package; 3 leads
DB
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
SOT323
E AX
y
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
Lp
detail X
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
A1
max
bp
c
D
E
e
e1 HE Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25 2.2
0.10 1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45 0.23
0.15 0.13
0.2
0.2
OUTLINE
VERSION
SOT323
IEC
REFERENCES
JEDEC
JEITA
SC-70
Fig 18. Package outline SOT323 (SC-70)
BSS138PW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
© NXP B.V. 2010. All rights reserved.
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