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PDF BUK7Y18-55B Data sheet ( Hoja de datos )
| Número de pieza | BUK7Y18-55B | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK7Y18-55B
N-channel TrenchMOS standard level FET
Rev. 04 — 7 April 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
product has been designed and qualified to the appropriate AEC standard for use in
automotive critical applications.
1.2 Features and benefits
Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads
Advanced braking systems (ABS)
Automotive systems
Engine management
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ≥ 25 °C; Tj ≤ 175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1; see Figure 4
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 20 A;
Tj = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
ID = 47.4 A; Vsup ≤ 55 V;
RGS = 50 Ω; VGS = 10 V;
Tj(init) = 25 °C; unclamped
QGD
gate-drain charge ID = 20 A; VDS = 44 V;
VGS = 10 V; see Figure 14
Min Typ Max Unit
- - 55 V
- - 47.4 A
- - 85 W
- 12.7 18 mΩ
- - 77 mJ
- 8.1 - nC
1 page  
NXP Semiconductors
BUK7Y18-55B
N-channel TrenchMOS standard level FET
103
ID (A)
102
Limit RDSon = VDS / ID
10
1
10-1
10-2
1
DC
10
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
003aac613
102 103
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
Conditions
see Figure 5
Min Typ Max Unit
- - 1.76 K/W
10
Zth (j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
10-1
0.02
003aac482
P δ = tp
T
single shot
tp
T
t
10-2
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.
BUK7Y18-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUK7Y18-55B
N-channel TrenchMOS standard level FET
8. Revision history
Table 7. Revision history
Document ID
Release date Data sheet status
Change notice
BUK7Y18-55B_4
Modifications:
20100407
Product data sheet
-
• Status changed from objective to product.
BUK7Y18-55B_3
20100218
Objective data sheet
-
Supersedes
BUK7Y18-55B_3
BUK7Y18-55B_2
BUK7Y18-55B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 7 April 2010
© NXP B.V. 2010. All rights reserved.
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