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PDF BUK768R1-40E Data sheet ( Hoja de datos )
| Número de pieza | BUK768R1-40E | |
| Descripción | N-channel TrenchMOS standard level FET | |
| Fabricantes | NXP Semiconductors | |
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BUK768R1-40E
N-channel TrenchMOS standard level FET
Rev. 1.1 — 10 July 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding
environments due to 175 °C rating
True standard level gate with VGS(th)
rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage
ID drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C;
see Figure 1
- - 40 V
[1] - - 75 A
Ptot total power dissipation
Static characteristics
Tmb = 25 °C; see Figure 2
- - 96 W
RDSon
drain-source on-state resistance VGS = 10 V; ID = 20 A; Tj = 25 °C;
see Figure 11
-
5.6 7.2 mΩ
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 20 A;
VDS = 32 V; see Figure 13;
see Figure 14
- 7.4 - nC
[1] Continuous current is limited by package.
1 page  
NXP Semiconductors
BUK768R1-40E
N-channel TrenchMOS standard level FET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 5
minimum footprint; mounted on a
printed-circuit board
Min Typ Max Unit
- - 1.56 K/W
- 50 - K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10-1 0.05
0.02
single shot
10-2
003aah168
P δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
T
t
10-1
tp (s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 10 July 2012
© NXP B.V. 2012. All rights reserved.
5 of 14
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NXP Semiconductors
9. Revision history
Table 8. Revision history
Document ID
Release date
BUK768R1-40E v.1.1 20120710
BUK768R1-40E v.1 20120706
BUK768R1-40E
N-channel TrenchMOS standard level FET
Data sheet status
Product data sheet
Product data sheet
Change notice
-
-
Supersedes
BUK768R1-40E v.1
-
BUK768R1-40E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1.1 — 10 July 2012
© NXP B.V. 2012. All rights reserved.
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