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PDF PSMN017-30PL Data sheet ( Hoja de datos )
| Número de pieza | PSMN017-30PL | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
Rev. 2 — 3 April 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for logic level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Tj junction temperature
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1] Continuous current is limited by package.
Conditions
Min
Tj ≥ 25 °C; Tj ≤ 175 °C
-
Tmb = 25 °C; VGS = 10 V; see Figure 1 [1] -
Tmb = 25 °C; see Figure 2
-
-55
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 13
-
-
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
see Figure 14; see Figure 15
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
see Figure 14; see Figure 15
-
-
VGS = 10 V; Tj(init) = 25 °C; ID = 32 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
-
Typ Max Unit
- 30 V
- 32 A
- 45 W
- 175 °C
18.7 23.4 mΩ
13.4 17
mΩ
1.94 -
5.1 -
nC
nC
- 13 mJ
1 page  
NXP Semiconductors
PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 10 A; Tj = 175 °C;
see Figure 12
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
VGS = 10 V; ID = 10 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 10 A; Tj = 100 °C;
see Figure 12
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 13
RG gate resistance
Dynamic characteristics
f = 1 MHz
QG(tot)
total gate charge
ID = 10 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 0 A; VDS = 0 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 10 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
QGS
QGS(th)
gate-source charge
pre-threshold gate-source
charge
ID = 10 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
QGS(th-pl)
post-threshold gate-source
charge
QGD
VGS(pl)
gate-drain charge
gate-source plateau voltage
ID = 10 A; VDS = 15 V; see Figure 14;
see Figure 15
Ciss input capacitance
Coss output capacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
Crss reverse transfer capacitance
PSMN017-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 April 2012
Min Typ Max Unit
30 - - V
27 - - V
1.3 1.7 2.15 V
0.5 - - V
- - 2.45 V
-
0.3 1
µA
- - 50 µA
- 10 100 nA
- 10 100 nA
- - 43.2 mΩ
- 18.7 23.4 mΩ
- 24 31.5 mΩ
- - 23.5 mΩ
-
13.4 17
mΩ
- 2.03 - Ω
- 10.7 - nC
- 9.55 - nC
- 5.1 - nC
- 1.52 - nC
- 1 - nC
- 0.5 - nC
- 1.94 - nC
- 2.86 - V
- 552 - pF
- 127 - pF
- 64 - pF
© NXP B.V. 2012. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
PSMN017-30PL v.2
Modifications:
20120403
Product data sheet
• Status changed from objective to product.
• Various changes to content.
PSMN017-30PL v.1 20120228
Objective data sheet
Change notice
-
-
Supersedes
PSMN017-30PL v.1
-
PSMN017-30PL
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 3 April 2012
© NXP B.V. 2012. All rights reserved.
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