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PDF PMT29EN Data sheet ( Hoja de datos )
| Número de pieza | PMT29EN | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PMT29EN
30 V, 6 A N-channel Trench MOSFET
Rev. 1 — 31 August 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 6 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 6 A
- 24 29 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
G gate
D drain
S source
D drain
Simplified outline
4
123
SOT223 (SC-73)
Graphic symbol
D
G
S
017aaa253
1 page  
NXP Semiconductors
PMT29EN
30 V, 6 A N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.5
0.33
0.25
0.2
0.1
10 0.05
0.02
0.01 0
017aaa320
1
10–3
10–2
10–1
1
10 102 103
tp(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa321
Zth(j-a)
(K/W)
102 duty cycle = 1
0.5
0.25
10
0.1
0.75
0.33
0.2
0.05
0
1
10–3
0.02
0.01
10–2
10–1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGSth
gate-source threshold
voltage
IDSS drain leakage current
Conditions
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VDS = VGS; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
PMT29EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 August 2011
Min Typ Max Unit
30 - - V
1 1.5 2.5 V
- - 1 µA
- - 10 µA
© NXP B.V. 2011. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
PMT29EN
30 V, 6 A N-channel Trench MOSFET
1.3 1.2
(4×) (4×)
7
3.85
3.6
3.5
0.3
4
3.9 6.1 7.65
1 23
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
2.3
1.2
(3×)
1.3
(3×)
6.15
2.3
Fig 19. Reflow soldering footprint for SOT223 (SC-73)
8.9
6.7
sot223_fr
1.9
1
4
6.2 8.7
23
1.9
(3×)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
2.7 2.7
1.1
1.9
(2×)
Fig 20. Wave soldering footprint for SOT223 (SC-73)
PMT29EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 31 August 2011
sot223_fw
© NXP B.V. 2011. All rights reserved.
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