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PDF PMN25UN Data sheet ( Hoja de datos )
| Número de pieza | PMN25UN | |
| Descripción | 6A N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMN25UN
20 V, 6 A N-channel Trench MOSFET
Rev. 1 — 28 July 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 6 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 6 A
- 23 27 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
D drain
D drain
G gate
S source
D drain
D drain
Simplified outline
654
123
SOT457 (TSOP6)
Graphic symbol
D
G
mbb076 S
1 page  
NXP Semiconductors
PMN25UN
20 V, 6 A N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0.02 0.01
0
017aaa203
1
10–3
10–2
10–1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33
0.25 0.2
10 0.1 0.05
017aaa204
0.02
0 0.01
1
10–3
10–2
10–1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN25UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 16
5 Page 
NXP Semiconductors
9. Package outline
Plastic surface-mounted package (TSOP6); 6 leads
DB
PMN25UN
20 V, 6 A N-channel Trench MOSFET
SOT457
E AX
y
654
HE v M A
pin 1
index
1
e
2
bp
3
wM B
A
A1
Q
Lp
detail X
c
01
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT A
A1 bp
c
D
E
e HE Lp Q
v
w
y
mm
1.1 0.1 0.40 0.26
0.9 0.013 0.25 0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
IEC
REFERENCES
JEDEC
JEITA
SC-74
Fig 18. Package outline SOT457 (TSOP6)
PMN25UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 28 July 2011
EUROPEAN
PROJECTION
ISSUE DATE
05-11-07
06-03-16
© NXP B.V. 2011. All rights reserved.
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PMN25UN.PDF ] | |
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