|
|
PDF PMF63UN Data sheet ( Hoja de datos )
| Número de pieza | PMF63UN | |
| Descripción | single N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PMF63UN (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
|
No Preview Available !
PMF63UN
20 V, single N-channel Trench MOSFET
Rev. 1 — 22 March 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 1.8 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 1.9 A
- 63 74 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
3
12
SOT323 (SC-70)
Graphic symbol
D
G
S
017aaa253
1 page  
NXP Semiconductors
PMF63UN
20 V, single N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
0.02
0.01
10
017aaa446
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for drain 6 cm2
10-1
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMF63UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
PMF63UN
20 V, single N-channel Trench MOSFET
2.65
1.85
1.325
2.35
0.6
(3×)
2
3
1
1.3
0.5
(3×)
0.55
(3×)
Fig 19. Reflow soldering footprint for SOT323 (SC-70)
1.425
(3×)
4.6
2.575
3.65 2.1
1.8
09
(2×)
Fig 20. Wave soldering footprint for SOT323 (SC-70)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot323_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
PMF63UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 March 2012
© NXP B.V. 2012. All rights reserved.
11 of 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMF63UN.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PMF63UN | single N-channel Trench MOSFET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |