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PDF PMDPB42UN Data sheet ( Hoja de datos )
| Número de pieza | PMDPB42UN | |
| Descripción | dual N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMDPB42UN
20 V, dual N-channel Trench MOSFET
Rev. 1 — 16 May 2012
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent
thermal conduction
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Small brushless DC motor drive
Power management in battery-driven
portables
Hard disc and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics (per transistor)
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
RDSon
drain-source on-state VGS = 4.5 V; ID = 3.9 A; Tj = 25 °C
resistance
Min Typ Max Unit
--
-8 -
[1] -
-
20 V
8V
5.1 A
- 40 50 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
1 page  
NXP Semiconductors
PMDPB42UN
20 V, dual N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0.02
0.01
aaa-002049
1
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.5
0.25
0.75
0.33
0.2
0.1
0.05
0.02 0.01
0
aaa-002050
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for drain 6 cm2
10-1
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB42UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
9. Package outline
PMDPB42UN
20 V, dual N-channel Trench MOSFET
0.77
0.57
(2×)
2.1
1.9 0.54
0.44
(2×)
3
1
2.1
1.9
1.1
0.9
0.3
0.2
Dimensions in mm
Fig 18. Package outline SOT1118 (DFN2020-6)
10. Soldering
4 0.65
(4×)
0.35
6 0.25
(6×)
0.65
max
0.04
max
10-05-31
2.1
0.65 0.65
0.49 0.49
0.875
2.25
0.875
0.3 0.4
(6×) (6×)
1.05 1.15
(2×) (2×)
0.35
(6×)
0.72
(2×)
0.45
(6×)
0.82
(2×)
Fig 19. Reflow soldering footprint for SOT1118 (DFN2020-6)
solder lands
solder paste
solder resist
occupied area
Dimensions in mm
sot1118_fr
PMDPB42UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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| PDF Descargar | [ Datasheet PMDPB42UN.PDF ] | |
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