|
|
PDF PMFPB8032XP Data sheet ( Hoja de datos )
| Número de pieza | PMFPB8032XP | |
| Descripción | 3.7A / 320mV VF P-channel MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PMFPB8032XP (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky
combination
21 December 2012
Product data sheet
1. General description
Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench
MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)
Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• 1.8 V RDSon rated for low-voltage gate drive
• Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Integrated ultra low VF MEGA Schottky diode
3. Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portables
• Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
MOSFET transistor
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A
Schottky diode
IF
forward current
Tsp ≤ 105 °C
- - 2A
VR
reverse voltage
Tamb = 25 °C
- - 20 V
MOSFET transistor static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.7 A; Tj = 25 °C
resistance
- 80 102 mΩ
Scan or click this QR code to view the latest information for this product
1 page  
NXP Semiconductors
PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
MOSFET transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
in free air; t ≤ 5 s
Rth(j-sp)
thermal resistance
from junction to solder
point
Schottky diode
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
[2] -
[2] -
-
225 260 K/W
99 115 K/W
54 62 K/W
16 20 K/W
[1] - - 260 K/W
[2] - - 105 K/W
- - 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
10 0.05
0.02
0.01
1
0
017aaa564
10-1
10-5
10-4
10-3
10-2
10-1
FR4 PCB, standard footprint
1
10 102 103
tp (s)
Fig. 4. MOSFET transistor: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
PMFPB8032XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 December 2012
© NXP B.V. 2012. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
PMFPB8032XP
20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination
-4
IS
(A)
-3
017aaa540
-2
-1
Tj = 150 °C
Tj = 25 °C
10
IF
(A)
1
(1)
(2)
10- 1
10- 2
(3) (4) (5)
10- 3
017aaa084
0
0 -0.4 -0.8 -1.2 -1.4
VSD (V)
VGS = 0 V
Fig. 18. MOSFET transistor: Source current as a
function of source-drain voltage; typical values
10- 4
0.0 0.2 0.4 0.6 0.8 1.0
VF (V)
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
Fig. 19. Schottky diode: Forward current as a function
of forward voltage; typical values
1
IR
(A)
10- 1
10- 2
017aaa085
(1)
(2)
250
Cd
(pF)
200
017aaa086
10- 3
10- 4
(3)
150
100
10- 5
10- 6
(4)
50
10- 7
0
5
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
10
15 20
VR (V)
Fig. 20. Schottky diode: Reverse current as a function
of reverse voltage; typical values
0
0 5 10
f = 1 MHz; Tamb = 25 °C
15 20
VR (V)
Fig. 21. Schottky diode: Diode capacitance as a
function of reverse voltage; typical values
PMFPB8032XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 December 2012
© NXP B.V. 2012. All rights reserved
11 / 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PMFPB8032XP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PMFPB8032XP | 3.7A / 320mV VF P-channel MOSFET | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |