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PDF PMF170XP Data sheet ( Hoja de datos )
| Número de pieza | PMF170XP | |
| Descripción | 1A P-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMF170XP
20 V, 1 A P-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Low RDSon
• Very fast switching
• Trench MOSFET technology
3. Applications
• Relay driver
• High-speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = -4.5 V; Tamb 25 °C
VGS = -4.5 V; ID = -1 A; Tj = 25 °C
Min Typ Max Unit
- - -20 V
-12 -
12 V
[1] - - -1 A
- 175 200 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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1 page  
NXP Semiconductors
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05 0.02
10 0.01
0
PMF170XP
20 V, 1 A P-channel Trench MOSFET
017aaa301
1
10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa302
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
0.05
10 0.01
0.02
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 A; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
PMF170XP
All information provided in this document is subject to legal disclaimers.
Product data sheet
29 October 2013
Min Typ Max Unit
-20 - - V
-0.65 -0.9 -1.15 V
- - -1 µA
- - -10 µA
© NXP N.V. 2013. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
PMF170XP
20 V, 1 A P-channel Trench MOSFET
13. Soldering
2.65
1.85
1.325
2.35
0.6
(3×)
2
3
1
1.3
0.5
(3×)
0.55
(3×)
Fig. 19. Reflow soldering footprint for SC-70 (SOT323)
4.6
1.425
(3×)
2.575
3.65 2.1
Fig. 20. Wave soldering footprint for SC-70 (SOT323)
1.8
09
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot323_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
PMF170XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
11 / 15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMF170XP.PDF ] | |
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