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PDF PMPB12UN Data sheet ( Hoja de datos )
| Número de pieza | PMPB12UN | |
| Descripción | 20V single N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMPB12UN
20 V single N-channel Trench MOSFET
6 July 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
• Trench MOSFET technology
• Very fast switching
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated 100 % solderable side pads for optical solder inspection
1.3 Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portables
• Hard disk and computing power management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 7.9 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 11.3 A
- 14 18 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMPB12UN
20 V single N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
017aaa542
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 017aaa543
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.33
0.2
10
0.5
0.25
0.1
0.05
0.02
0 0.01
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 150 °C
PMPB12UN
All information provided in this document is subject to legal disclaimers.
Product data sheet
6 July 2012
Min Typ Max Unit
20 - - V
0.4 0.7 1
V
- - 1 µA
- - 100 µA
© NXP B.V. 2012. All rights reserved
5 / 15
5 Page 
NXP Semiconductors
10. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
PMPB12UN
20 V single N-channel Trench MOSFET
SOT1220
0.33 (6×)
0.43 (6×)
0.53 (6×)
0.76
0.66
0.56
0.775
2.06
0.285
1.25
1.35
1.05
0.9
1.1
1.2
0.935
0.935
2.5
0.25 0.35 0.45
0.65
0.35 (6×)
0.65
0.25 (6×) 0.45 (6×)
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
Fig. 19. Reflow soldering footprint for SOT1220 (DFN2020MD-6)
PMPB12UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
6 July 2012
sot1220_fr
© NXP B.V. 2012. All rights reserved
11 / 15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMPB12UN.PDF ] | |
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