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PDF PMDPB28UN Data sheet ( Hoja de datos )
| Número de pieza | PMDPB28UN | |
| Descripción | dual N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
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PMDPB28UN
20 V, dual N-channel Trench MOSFET
Rev. 1 — 26 April 2012
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless
ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent
thermal conduction
1.3 Applications
Charging switch for portable devices
DC-to-DC converters
Small brushless DC motor drive
Power management in battery-driven
portables
Hard disc and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics (per transistor)
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
RDSon
drain-source on-state VGS = 4.5 V; ID = 4.6 A; Tj = 25 °C
resistance
Min Typ Max Unit
--
-8 -
[1] -
-
20 V
8V
5.8 A
- 30 37 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
1 page  
NXP Semiconductors
PMDPB28UN
20 V, dual N-channel Trench MOSFET
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
102
0.33
0.2
0.5
0.25
0.1
0.05
10
0 0.02
0.01
017aaa516
1
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102 duty cycle = 1
0.75
0.5
0.33 0.25
0.2
0.1
10 0.05
0
0.02
0.01
017aaa517
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDPB28UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 April 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
PMDPB28UN
20 V, dual N-channel Trench MOSFET
2.1
0.65 0.65
0.49 0.49
0.875
2.25
0.875
0.3 0.4
(6×) (6×)
1.05 1.15
(2×) (2×)
0.35
(6×)
0.72
(2×)
0.45
(6×)
0.82
(2×)
Fig 19. Reflow soldering footprint for SOT1118 (DFN2020-6)
solder lands
solder paste
solder resist
occupied area
Dimensions in mm
sot1118_fr
PMDPB28UN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 26 April 2012
© NXP B.V. 2012. All rights reserved.
11 of 15
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMDPB28UN.PDF ] | |
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